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PD - 94388A
IRGP30B60KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
* * * * * * * Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10s Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package
C
VCES = 600V IC = 30A, TC=100C
G E
tsc > 10s, TJ=150C
n-channel
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation.
VCE(on) typ. = 1.95V
TO-247AD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ T C = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max.
600 60 30 120 120 60 30 120 20 304 122 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6.0
Max.
0.41 1.32 --- 40 ---
Units
C/W
g
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1
10/14/02
IRGP30B60KD-E
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VCE(on) V(BR)CES VGE(th)
VGE(th)/TJ
gfe ICES VFM IGES
Min. 600 --- --- --- Gate Threshold Voltage 3.5 Temperature Coeff. of Threshold Voltage --- Forward Transconductance --- Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current ---
Typ. --- 0.4 1.95 2.40 4.5 -10 18 5.0 1000 1.30 1.25 ---
Ref.Fig. Max. Units Conditions --- V VGE = 0V, IC = 500A --- V/C VGE = 0V, IC = 1.0mA, (25C-150C) 5, 6,7 2.35 V IC = 30A, VGE = 15V 2.75 IC = 30A,VGE = 15V, TJ = 150C 9,10,11 9,10,11 5.5 V VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA, (25C-150C) 12 --- S VCE = 50V, I C = 50A, PW=80s 250 A VGE = 0V, VCE = 600V 2000 VGE = 0V, VCE = 600V, TJ = 150C 1.55 V IF = 30A 8 TJ = 150C 1.50 IF = 30A 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ref.Fig. Max. Units Conditions 23 153 IC = 30A 21 nC VCC = 400V CT.1 66 VGE = 15V 620 J IC = 30A, VCC = 400V CT.4 955 VGE =15V, RG = 10, L=200H, 1575 LS = 150nH TJ = 25C 60 IC = 30A, VCC = 400V 39 VGE = 15V, RG = 10 L =200H CT.4 200 ns LS = 150nH, TJ = 25C 40 CT.4 1085 IC = 30A, VCC = 400V 13,15 1350 J VGE = 15V,RG = 10, L =200H 2435 LS = 150nH TJ = 150C WF1,WF2 CT.4 60 IC = 30A, VCC = 400V 39 VGE = 15V, RG = 10 L =200H 14, 16 235 ns LS = 150nH, TJ = 150C WF1,WF2 42 --- VGE = 0V 22 --- pF VCC = 30V --- f = 1.0MHz 4 TJ = 150C, IC = 120A, Vp =600V Reverse Bias Safe Operting Area FULL SQUARE VCC = 500V, VGE = +15V to 0V, R G=10 CT.2 CT.3 TJ = 150C, Vp =600V, RG = 10 s Short Circuit Safe Operting Area 10 --- --- WF.4 VCC = 360V, VGE = +15V to 0V 17,18,19 Reverse Recovery energy of the diode --- 925 1165 J TJ = 150C 20,21 Diode Reverse Recovery time --- 125 --- ns VCC = 400V, IF = 30A, L = 200H CT.4,WF.3 Diode Peak Reverse Recovery Current --- 43 48 A VGE = 15V,RG = 10, LS = 150nH
Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. 102 14 44 350 825 1175 46 28 185 31 635 1150 1785 46 28 205 32 1750 160 60
Notes: VCC = 80% (VCES), VGE = 15V, L = 28H, RG = 22.
Energy losses include "tail" and diode reverse recovery.
2
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IRGP30B60KD-E
80
350 300
60
250
Ptot (W)
IC (A)
200 150 100 50
40
20
0 0 20 40 60 80 100 120 140 160 T C (C)
0 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
1000
1000
100 10 s
IC (A)
100
10 100 s
IC A)
10
1
1ms DC
0.1 1 10 100 VCE (V) 1000 10000
1 10 100 VCE (V) 1000
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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3
IRGP30B60KD-E
60 50 40
ICE (A)
60
VGE = 18V VGE = 15V VGE = 12V VGE = 10V
ICE (A)
50 40 30 20 10 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
VGE = 8.0V 30 20 10 0 0 1 2 3 VCE (V) 4 5
0
1
2
3 VCE (V)
4
5
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
60 50 40 VGE = 18V VGE = 15V VGE = 12V VGE = 10V
IF (A)
60 50 40 30 20 10 0 -40C 25C 150C
ICE (A)
VGE = 8.0V 30 20 10 0 0 1 2 3 VCE (V) 4 5
0.0
0.5
1.0 VF (V)
1.5
2.0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
4
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IRGP30B60KD-E
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 ICE = 15A ICE = 30A ICE = 60A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 15A ICE = 30A ICE = 60A
12 10 8 6 4 2 0
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
VCE (V) ICE (A)
250 T J = 25C 200 T J = 150C
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 15A ICE = 30A ICE = 60A
150
100
50
T J = 150C T J = 25C
0 15 20 0 5 10 VGE (V) 15 20
Fig. 11 - Typical VCE vs. VGE TJ = 150C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
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IRGP30B60KD-E
3000 2500 2000
Energy (J)
1000
EOFF 1500 EON 1000 500
Swiching Time (ns)
tdOFF
100
td ON tF tR
0 0 20 40 IC (A) 60 80
10 0 20 40 60 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L = 200H; VCE = 400V RG = 10; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L = 200H; VCE = 400V RG = 10; VGE = 15V
3000
10000
2500
Swiching Time (ns)
2000
1000
Energy (J)
EOFF
1500
tdOFF
EON
1000
100
tdON tR
tF
500
0 0 25 50 75 100 125
10 0 25 50 75 100 125
RG ()
RG ()
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L = 200H; VCE = 400V ICE = 30A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L = 200H; VCE = 400V ICE = 30A; VGE = 15V
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IRGP30B60KD-E
50 45 40 35
50
RG = 4.7
45 40
RG = 10
35
IRR (A)
25 20 15 10 5 0 0 20 40
RG = 47 RG = 100
IRR (A)
80
30
RG = 22
30 25 20 15 10 5 0
60
0
25
50
75
100
125
IF (A)
RG ()
Fig. 17 - Typical Diode IRR vs. IF TJ = 150C
Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 30A
50 45 40 35
5000 10 4.760A
4000 47
Q RR (nC)
22
IRR (A)
30 25 20 15 10 5 0 0 500 1000 1500
3000
100
30A
2000
15A
1000
0 0 500 1000 1500 diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; IF= 30A; TJ = 150C
Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C
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IRGP30B60KD-E
1400 1200 1000
4.7 10 22 47 100
Energy (J)
800 600 400 200 0 0 20 40
60
80
IF (A)
Fig. 21 - Typical Diode ERR vs. IF TJ = 150C
10000
16 14
Cies
Capacitance (pF)
1000
200V 12 400V 10
VGE (V)
8 6 4
Coes
100
Cres
10 0 20 40 60 80 100
2 0 0 25 50 75 100 125 Q G, Total Gate Charge (nC)
VCE (V)
Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. VGE ICE = 30A; L = 600H
8
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IRGP30B60KD-E
10
Thermal Response ( Z thJC )
1
0.1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1 1
R1 R1 2
R2 R2 C 2
Ri (C/W) i (sec) 0.200 0.000428 0.209 0.013031
0.01
Ci= i/Ri Ci i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
0.10 0.05 0.02 0.01
J
Ri (C/W) i (sec) 0.205 0.000136 0.505 0.567 0.001645 0.037985
1
2
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGP30B60KD-E
L
L DUT
0
VCC
80 V Rg
DUT
480V
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT
L
4x
DC
- 5V
360V
Rg
DUT
DUT / DRIVER
VCC
Fig.C.T.3 - S.C.SOA Circuit
VCC ICM
Fig.C.T.4 - Switching Loss Circuit
R=
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
10
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IRGP30B60KD-E
700 600
90% ICE
35 30 tf 25 20
700 600 500
TEST CURRENT
70 60 50 40 30
90% test current
500 400 VCE (V) 300 200 100 0
400 VCE (V)
ICE (A)
15
5% V CE 5% ICE
300 200 100 0
Eon Loss
10 5 0
tr
10% test current 5% V CE
20 10 0
Eof f Loss
-100 -0.20
0.00
0.20
0.40
0.60
-5 0.80
-100 15.90
16.00
16.10 Time (s)
16.20
-10 16.30
Time(s)
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
100 0 -100 -200 VF (V) -300 -400 -500 -600 -700 -0.25
Peak IRR
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
600 300
40 30
QRR tRR
500
250
20 10 0 -10
200 100 400 VCE (V) ICE VCE 150 200 ICE (A)
IF (A)
300
10% Peak IRR
-20
100 50
-30 -40 0.35
0 -5.00 0 15.00
-0.05
0.15
0.00
5.00 time (S)
10.00
time (S)
Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
Fig. WF4- Typ. S.C Waveform @ TC = 150C using Fig. CT.3
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ICE (A)
IRGP30B60KD-E
TO-247AD Case Outline and Dimensions
TO-247AD package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/02
12
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